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PZT2907A PDF预览

PZT2907A

更新时间: 2024-09-28 17:01:31
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 466K
描述
60V,0.6A,General Purpose PNP Bipolar Transistor

PZT2907A 数据手册

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PNP Silicon Epitaxial Planar Transistor  
PZT2907A  
Features  
Epitaxial planar die construction  
Ideal for low power amplification and switching  
Complementary NPN type available PZT2222A  
Mechanic al Data  
Case: SOT-223  
Molding compound: UL flammability classification rating 94V-0  
Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-223  
Ordering Information  
Part Number  
Package  
SOT-223  
Shipping Quantity  
Marking Code  
2F  
PZT2907A  
4000pcs / Tape & Reel  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (Continuous)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-60  
Unit  
V
-60  
V
-5  
V
-0.6  
A
Thermal Characteristics  
Parameter  
Power Dissipation (Collector) *1  
Thermal Resistance (Junction-to-Ambient)  
Junction Temperature  
Symbol  
PD  
Value  
1.15  
Unit  
W
RθJA  
TJ  
108  
°C/W  
°C  
-55 ~ +150  
Storage Temperature Range  
TSTG  
-55 ~ +150  
°C  
Note1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2  
STM0381A: January 2020  
www.gmesemi.com  
1

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