Datasheet > PZT3019

PZT3019

更新时间： 2024-09-27 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
1页	544K
描述
Epitaxial Planar Transistor

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PZT3019 数据手册

PZT3019

NPN Transistor

Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

SOT-223

Description

The PZT3019 is designed for general

purpose amplifier applications and

switching requiring collector currents 1A.

Millimeter

Min. Max.

13̓TYP.

2.30 REF.

Millimeter

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

3 0 1 9

Date Code

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Ta=25

MAXIMUM RATINGS

ABSOLUTE

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

140

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Storage Temperature

-55~+150

Junction and

TJ,

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min

Max

Test Conditions

IC=100µA

IC=30mA

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

140

IE=100 µA

VCB= 90V

Emitter-Base Cutoff Current

IEBO

VCE(sat)

VBE(sat)

hFE1

VEB=

Collector Saturation Voltage

Base Saturation Voltage

IC=150mA,IB=15mA

VCE= 10V, IC=0.1mA

0.2

1.1

100

hFE2

10V, IC=10mA

VCE=

DC Current Gain

hFE3

10V, IC=150mA

10V, IC=500mA

10V, IC=1000mA

300

hFE4

VCE=

100

hFE5

Gain-Bandwidth Product

Output Capacitance

VCE= 50mV, IC= 50mA,

f=100MHz

VCB= 10V, f=1MHz,IE=0

Cob

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 1

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