5秒后页面跳转
PZT3904T1/D PDF预览

PZT3904T1/D

更新时间: 2024-01-26 02:18:31
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
10页 122K
描述
PZT3904T1 Data Sheet

PZT3904T1/D 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.82
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

PZT3904T1/D 数据手册

 浏览型号PZT3904T1/D的Datasheet PDF文件第2页浏览型号PZT3904T1/D的Datasheet PDF文件第3页浏览型号PZT3904T1/D的Datasheet PDF文件第4页浏览型号PZT3904T1/D的Datasheet PDF文件第5页浏览型号PZT3904T1/D的Datasheet PDF文件第6页浏览型号PZT3904T1/D的Datasheet PDF文件第7页 
PZT3904T1  
Preferred Device  
General Purpose Transistor  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector - Emitter Voltage  
Collector - Base Voltage  
Symbol Value  
Unit  
Vdc  
http://onsemi.com  
V
V
V
40  
60  
CEO  
CBO  
EBO  
Vdc  
COLLECTOR  
2, 4  
Emitter - Base Voltage  
6.0  
200  
Vdc  
Collector Current - Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
1
BASE  
Symbol  
Max  
Unit  
3
Total Device Dissipation FR- 5 Board  
P
D
225  
mW  
EMITTER  
(Note 1) T = 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
q
JA  
MARKING  
P
D
DIAGRAM  
Alumina Substrate, (Note 2) T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
417  
SOT-223  
CASE 318E  
Style 1  
q
JA  
T , T  
J
- 55 to  
+150  
1AM  
stg  
1. FR- 5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
1AM  
= Specific Device Code  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1000 / Tape & Reel  
PZT3904T1  
SOT-223  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
June, 2003 - Rev. 0  
PZT3904T1/D  

与PZT3904T1/D相关器件

型号 品牌 获取价格 描述 数据表
PZT3904T1G ONSEMI

获取价格

General Purpose Transistor
PZT3904-TP MCC

获取价格

Small Signal Bipolar Transistor,
PZT3904-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
PZT3904TRL NXP

获取价格

TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
PZT3904TRL YAGEO

获取价格

Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
PZT3904TRL13 NXP

获取价格

TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
PZT3906 SECOS

获取价格

Epitaxial Planar Transistor
PZT3906 WINNERJOIN

获取价格

TRANSISTOR (PNP)
PZT3906 NXP

获取价格

PNP switching transistor
PZT3906 STMICROELECTRONICS

获取价格

SMALL SIGNAL PNP TRANSISTOR