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PZT3904T1G PDF预览

PZT3904T1G

更新时间: 2024-09-28 10:19:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 152K
描述
General Purpose Transistor

PZT3904T1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.82
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

PZT3904T1G 数据手册

 浏览型号PZT3904T1G的Datasheet PDF文件第2页浏览型号PZT3904T1G的Datasheet PDF文件第3页浏览型号PZT3904T1G的Datasheet PDF文件第4页浏览型号PZT3904T1G的Datasheet PDF文件第5页浏览型号PZT3904T1G的Datasheet PDF文件第6页浏览型号PZT3904T1G的Datasheet PDF文件第7页 
PZT3904T1G  
General Purpose Transistor  
NPN Silicon  
Features  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
MAXIMUM RATINGS  
COLLECTOR  
2, 4  
Rating  
Collector -- Emitter Voltage  
Collector -- Base Voltage  
Symbol Value  
Unit  
Vdc  
V
V
V
40  
60  
CEO  
CBO  
EBO  
1
Vdc  
BASE  
Emitter -- Base Voltage  
6.0  
200  
Vdc  
3
Collector Current -- Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
mAdc  
C
EMITTER  
Symbol  
Max  
Unit  
Total Device Dissipation (Note 1)  
P
1.5  
12  
W
mW/C  
MARKING  
DIAGRAM  
D
T
= 25C  
A
Thermal Resistance Junction--to--Ambient  
(Note 1)  
R
R
83.3  
C/W  
θ
JA  
JA  
AYW  
1AM G  
G
SOT--223  
CASE 318E  
STYLE 1  
Thermal Resistance Junction--to--Lead #4  
Junction and Storage Temperature Range  
35  
C/W  
C  
θ
T , T  
J
-- 5 5 t o  
+150  
stg  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1AM  
A
Y
W
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb--Free Package  
2
1. FR-- 4 with 1 oz and 713 mm of copper area.  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
PZT3904T1G  
SOT--223  
(Pb--Free)  
1000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 -- Rev. 3  
PZT3904T1/D  

PZT3904T1G 替代型号

型号 品牌 替代类型 描述 数据表
SPZT3904T1G ONSEMI

类似代替

NPN Bipolar Transistor
PZT3904T1 ONSEMI

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General Purpose Transistor
PZT3904 FAIRCHILD

功能相似

NPN General Purpose Amplifier

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