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PZT3906 PDF预览

PZT3906

更新时间: 2024-01-12 18:01:12
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 179K
描述
TRANSISTOR (PNP)

PZT3906 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75外壳连接:COLLECTOR
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.25 V
Base Number Matches:1

PZT3906 数据手册

  
RoHS  
PZT3906  
SOT-223  
PZT3906 TRANSISTOR (PNP)  
FEATURES  
Power dissipation  
1. BASE  
2. COLLECTOR  
3. EMITTER  
PCM:  
1
W (Tamb=25)  
Collector current  
ICM: -0.2  
Collector-base voltage  
V(BR)CBO: -40  
A
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO Ic=-10µA,IE=0  
V(BR)CEO Ic=-1mA,IB=0  
V(BR)EBO IE=-10µA,IC=0  
-40  
-40  
-5  
V
V
V
ICBO  
ICEO  
VCB=-30V,IE=0  
-0.05  
-0.5  
µA  
µA  
Emitter cut-off current  
VCE=-30V,IB=0  
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
hFE(5)  
VCE(sat)  
VCE(sat)  
VBE(sat)  
VBE(sat)  
fT  
VCE=-1V,IC=-0.1mA  
VCE=-1V,IC=-1mA  
VCE=-1V,IC=-10mA  
VCE=-1V,IC=-50mA  
VCE=-1V,IC=-100mA  
IC=-10mA,IB=-1mA  
IC=-50mA,IB=-5mA  
IC=-10mA,IB=-1mA  
IC=-50mA,IB=-5mA  
VCE=-20V,IC=-10mA,f=100MHz  
60  
80  
DC current gain  
100  
60  
300  
30  
-0.25  
-0.4  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
-0.65  
250  
-0.85  
-0.95  
V
V
Transition frequency  
MHz  
pF  
Collector output capacitance  
Cob  
VCB=-0.5V,IE=0,f=100KHz  
VCE=-5V,Ic=-0.1mA,  
4.5  
4
Noise figure  
Delay Time  
NF  
td  
dB  
f=10HZ to15.7KHz,Rg=1K  
35  
nS  
VCC=-3.0Vdc,VBE=-0.5Vdc  
WEJ ELECTRONIC CO.,LTD  
IC=-10mAdc,IB1=-1.0mAdc  
Rise Time  
Storage Time  
Fall Time  
tr  
ts  
tf  
35  
225  
75  
nS  
nS  
nS  
VCC=-3.0Vdc,IC=-10mAdc  
IB1=IB2=-1.0mAdc  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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