Datasheet > PZT4401

PZT4401

更新时间： 2024-10-01 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	911K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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PZT4401 数据手册

SMD Type

Transistors

NPN Transistors

PZT4401 (KZT4401)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● Low Voltage and Low Current

● Linear Amplifier and Switch Applications

● Complementary to PZT4403

0.250

2.30 (typ)

Gauge Plane

1.Base

2.Collector

3.Emitter

0.70±0.1

4.60 (typ)

4.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

600

RθJA

125

150

℃/W

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

CB= 60 V , I

EB= 6V , I

=150 mA, I

= 500 mA, I

= 0

100

0.4

=15mA

= 50mA

=15mA

= 50mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

0.75

0.95

1.2

=150 mA, I

= 500 mA, I

FE(1)

FE(2)

FE(3)

FE(4)

CE= 1V, I

= 0.1mA

= 1mA

DC current gain

= 10mA

= 150mA

100

300

Emitter input capacitance

Collector output capacitance

Transition frequency

^EB= 0.5V, I

^CB= 5V, I = 0,f=1MHz

^CE= 10V, I = 20mA,f=100MHz

C= 0,f=1MHz

250

MHz

■ Marking

ZT4401

Marking

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中文翻译

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