Datasheet > PZT3904

PZT3904

更新时间： 2024-09-27 10:19:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
5页	163K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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PZT3904 数据手册

PZT3904

NPN Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

SOT-223

5ꢄꢂꢅꢇ

ꢀ

BASE

COLLECTOR

EMITTER

FEATURES

ꢄꢂꢈꢇ

ꢅꢈefꢅe

Power dissipation

P _{CM : 1 W˄Tamb=25ć˅}

Collector current

ꢃ ꢂ ꢄ ꢄ f ꢄ ꢂ ꢅ ꢄ

ꢁe

fꢃe

I _{CM : 0.2 A}

ꢈ ꢂ ꢃ ꢄ

Collector-base voltage

V_{(BR)CBO : 6 0 V}

ꢄ ꢂ ꢉ ꢅ

ꢁ ꢂ ꢃ ꢄ f ꢄ ꢂ ꢅ ꢄ

Operating and storage junction temperature range

T_{JˈTstg: -55ć to +150ć}

Unit : mm

ELECTRICAL CHARACTERISTICS (Tamb=25Я

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOIc=10µA,I_E=0

V_(BR)CEOIc=1mA,I_B=0

V_(BR)EBOI_E=10µA,I_C=0

I_CBO

I_EBO

V_CB=60V,I_E=0

0.1

µA

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V,I_C=0.1mA

V_CE=1V,I_C=1mA

DC current gain

V_CE=1V,I_C=10mA

V_CE=1V,I_C=50mA

V_CE=1V,I_C=100mA

I_C=10mA,I_B=1mA

I_C=50mA,I_B=5mA

I_C=10mA,I_B=1mA

I_C=50mA,I_B=5mA

V_CE=20V,I_C=10mA,f=100MHz

V_CB=5V,I_E=0,f=1MHz

100

300

0.2

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.65

300

0.85

0.95

Transition frequency

MHz

Collector output capacitance

C_ob

V_CE=5V,I_c=0.1mA,

Noise figure

f=10HZ to 15.7KHz,Rg=1Kȍ

Delay time

Rise time

Storage time

Fall time

t_d

t_r

_CC=3V,

I_C=10mA,V_BE(off)=0.5V,I_B1=1mA

V_CC=3V, I_C=10mA

t_S

t_f

200

I_B1= I_B2= 1mA

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 5

12 3 4 5

中文翻译

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