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PZT2907A-TP-HF PDF预览

PZT2907A-TP-HF

更新时间: 2024-09-27 20:57:23
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
4页 543K
描述
Small Signal Bipolar Transistor,

PZT2907A-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.7
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G4湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):365 ns
最大开启时间(吨):42 nsBase Number Matches:1

PZT2907A-TP-HF 数据手册

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M C C  
TM  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
PZT2907A  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
PNP  
·
·
·
·
·
·
Surface Mount SOT-223 Package  
Capable of 1Watts of Power Dissipation  
Ic:0.6A  
Plastic-Encapsulate  
Transistors  
Marking:ZT2907A  
Operating and Storage Junction Temperatures:-55oC to 150oC  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
·
SOT-223  
RoHS Compliant. See ordering information)  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
IEBO  
Collector-Emitter Breakdown Voltage*  
(IC=-10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-10µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=-10µAdc, IC=0)  
Emitter Cutoff Current  
-60  
-60  
-5.0  
Vdc  
Vdc  
Vdc  
nAdc  
(VEB=-5Vdc, IC=0Vdc)  
-50  
ICBO  
Collector Cutoff Current  
(VCB=-50Vdc, IE=0)  
-0.01  
µAdc  
ON CHARACTERISTICS  
hFE  
DC Current Gain*  
1.BASE  
2.COLLECTOR  
3.EMITTER  
(IC=-0.1mAdc, VCE=--10Vdc)  
(IC=-1.0mAdc, VCE=-10Vdc)  
(IC=-10mAdc, VCE=-10Vdc)  
(IC=-150mAdc, VCE=-10Vdc)  
(IC=-500mAdc, VCE=-10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-150mAdc, IB=-15mAdc)  
(IC=-500mAdc, IB=-50mAdc)  
Base-Emitter Saturation Voltage  
(IC=-150mAdc, IB=-15mAdc)  
(IC=-500mAdc, IB=-50mAdc)  
75  
100  
100  
100  
50  
300  
DIMENSIONS  
MM  
INCHES  
MIN  
6.30  
VCE(sat)  
DIM  
A
MIN  
.248  
MAX  
.264  
MAX  
6.70  
NOTE  
-0.4  
-1.6  
Vdc  
Vdc  
B
C
D
E
F
.130  
.264  
.001  
.114  
.146  
.287  
.004  
.122  
3.30  
6.70  
0.02  
2.90  
3.70  
7.30  
0.10  
3.10  
VBE(sat)  
-1.3  
-2.6  
.091  
2.30  
G
- - -  
.071  
.014  
---  
---  
0.23  
0.75  
1.80  
0.35  
- - -  
SMALL-SIGNAL CHARACTERISTICS  
H
J
.009  
.030  
fT  
Current Gain-Bandwidth Product  
(IC=-50mAdc, VCE=-20Vdc, f=-  
100MHz)  
200  
MHz  
Ccbo  
Cibo  
Output Capacitance  
(VCB=-10Vdc, IE=0, f=1MHz)  
Input Capacitance  
(VEB=-2.0Vdc, IC=0, f=1MHz)  
8.0  
pF  
pF  
30.0  
SWITCHING CHARACTERISTICS  
td  
tr  
ts  
tf  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
12  
30  
300  
65  
ns  
ns  
ns  
ns  
IC=-150mA, IB1=-IB2=-15mA  
www.mccsemi.com  
1 of 4  
Revision: A  
2014/11/21  

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