Datasheet > PZT2907AT1_11

PZT2907AT1_11

更新时间： 2024-01-27 22:49:05

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	108K
描述
PNP Silicon Epitaxial Transistor

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中文翻译

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PZT2907AT1_11 数据手册

PZT2907AT1,

SPZT2907AT1G

Preferred Device

PNP Silicon

Epitaxial Transistor

This PNP Silicon Epitaxial transistor is designed for use in linear

and switching applications. The device is housed in the SOT-223

package which is designed for medium power surface mount

applications.

http://onsemi.com

Features

SOT−223

CASE 318E

STYLE 1

 NPN Complement is PZT2222AT1

 The SOT-223 package can be soldered using wave or reflow

 SOT-223 package ensures level mounting, resulting in improved

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering eliminating

the possibility of damage to the die.

COLLECTOR

2, 4

BASE

 AEC−Q101 Qualified and PPAP Capable

 S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

EMITTER

 Pb−Free Packages are Available*

MARKING DIAGRAM

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol Value

Unit

Vdc

AYW

P2F G

−60

CEO

CBO

EBO

Vdc

−5.0

−600

Vdc

P2F

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(Note: Microdot may be in either location)

Total Device Dissipation (Note 1)

T = 25C

1.5

mW/C

ORDERING INFORMATION

Thermal Resistance Junction−to−Ambient

(Note 1)

83.3

C/W

†

Device

Package

Shipping

Lead Temperature for Soldering,

0.0625 from case

PZT2907AT1

PZT2907AT1G

SOT−223 1,000 / Tape & Reel

260

C

Time in Solder Bath

Sec

SOT−223 1,000 / Tape & Reel

(Pb−Free)

Operating and Storage Temperature Range

T , T

−65 to

+150

C

stg

SPZT2907AT1G SOT−223 1,000 / Tape & Reel

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PZT2907AT3

SOT−223 4,000 / Tape & Reel

PZT2907AT3G

SOT−223 4,000 / Tape & Reel

(Pb−Free)

1. FR−4 with 1 oz and 713 mm of copper area.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2011

Publication Order Number:

November, 2011 − Rev. 9

PZT2907AT1/D

12 3 4

中文翻译

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与PZT2907AT1_11相关器件

型号	品牌	获取价格	描述	数据表
PZT2907AT1G	ONSEMI	获取价格	PNP Silicon Epitaxial Transistor
PZT2907AT3	ONSEMI	获取价格	PNP Silicon Epitaxial Transistor
PZT2907AT3	ROCHESTER	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261A
PZT2907AT3G	ONSEMI	获取价格	PNP Silicon Epitaxial Transistor
PZT2907A-TAPE-7	NXP	获取价格	TRANSISTOR 0.6 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
PZT2907A-TP	MCC	获取价格	Small Signal Bipolar Transistor,
PZT2907A-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
PZT2907ATRL	YAGEO	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
PZT2907ATRL	NXP	获取价格	TRANSISTOR 0.6 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
PZT2907ATRL13	NXP	获取价格	TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa

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