Datasheet > PYA28C16-25CWM

PYA28C16-25CWM

更新时间： 2024-11-12 00:37:51

品牌	Logo	应用领域
PYRAMID		/
页数	文件大小	规格书
10页	667K
描述
Access Times of 150, 200, 250 and 350ns Single 5VÂ±10% Power Supply

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PYA28C16-25CWM 数据手册

PYA28C16

2K X 8 EEPROM

FEATURES

Access Times of 150, 200, 250 and 350ns

Single 5V±10% Power Supply

Endurance:

- 10,000 Write Cycles

- 100,000 Write Cycles (optional)

Fast Byte Write (200µs or 1 ms)

Data Retention: 10 Years

Available in the following package:

– 24-Pin 600 mil Ceramic DIP

– 32-Pin Ceramic LCC (450x550 mils)

Low Power CMOS:

- 60 mA Active Current

- 150 µA Standby Current

Fast Write Cycle Time - DATA Polling

CMOS & TTL Compatible Inputs and Outputs

PIN CONFIGURATIONS

DESCRIPTION

ThePYA28C16isa5Volt2Kx8EEPROM. ThePYA28C16

is a 16K memory organized as 2,048 words by 8 bits. Data

Retention is 10 Years. The device is available in a 24-Pin

600 mil wide Ceramic DIP and 32-Pin LCC.

DIP (C12)

FUNCTIONAL BLOCK DIAGRAM

LCC (L6)

Document # EEPROM108 REV A

Revised July 2012

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
PYA28C16-25CWMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-25LM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-25LMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35CWM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35CWMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35LM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35LMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16B	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
PYA28C16B-15CWM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
PYA28C16B-15CWMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum