生命周期: | Active | 包装说明: | DIP-28 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
最长访问时间: | 350 ns | 其他特性: | LG-MAX |
JESD-30 代码: | R-CDIP-T28 | 长度: | 32.766 mm |
内存密度: | 16384 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 28 | 字数: | 2048 words |
字数代码: | 2000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 2KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
编程电压: | 5 V | 筛选级别: | MIL-STD-883 Class B |
座面最大高度: | 5.8928 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm | 最长写入周期时间 (tWC): | 10 ms |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PYA28C16B-35LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-35LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-15CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-15CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-15LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-15LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-20CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-20CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-20LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-20LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum |