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PYA28C16B-25LMB PDF预览

PYA28C16B-25LMB

更新时间: 2024-09-24 00:37:51
品牌 Logo 应用领域
PYRAMID /
页数 文件大小 规格书
10页 663K
描述
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum

PYA28C16B-25LMB 数据手册

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PYA28C16B  
2K X 8 EEPROM  
FEATURES  
Access Times of 150, 200, 250 and 350ns  
Single 5V±10% Power Supply  
Endurance:  
- 10,000 Write Cycles  
- 100,000 Write Cycles (optional)  
Byte Write Cycle Time - 10 ms Maximum  
Data Retention: 10 Years  
Available in the following package:  
– 24-Pin 600 mil Ceramic DIP  
– 32-Pin Ceramic LCC (450x550 mils)  
Low Power CMOS:  
- 60 mA Active Current  
- 150 µA Standby Current  
Fast Write Cycle Time - DATA Polling  
CMOS & TTL Compatible Inputs and Outputs  
PIN CONFIGURATIONS  
DESCRIPTION  
The PYA28C16B is a 5 Volt 2Kx8 EEPROM. The PY-  
A28C16B is a 16K memory organized as 2,048 words by  
8 bits. Data Retention is 10 Years. The device is available  
in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC.  
DIP (C12)  
FUNCTIONAL BLOCK DIAGRAM  
LCC (L6)  
Document # EEPROM109 REV OR  
Revised October 2012  

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Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
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Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum