生命周期: | Active | 包装说明: | LCC-32 |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
最长访问时间: | 200 ns | JESD-30 代码: | R-CQCC-N32 |
长度: | 13.97 mm | 内存密度: | 16384 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 2KX8 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | QCCN |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 编程电压: | 5 V |
筛选级别: | MIL-STD-883 Class B | 座面最大高度: | 1.905 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | QUAD | 宽度: | 11.43 mm |
最长写入周期时间 (tWC): | 10 ms | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PYA28C16B-25CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-25CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-25LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-25LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-35CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-35CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-35LM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16B-35LMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-15CWM | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum | |
PYA28C16BE-15CWMB | PYRAMID |
获取价格 |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum |