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PXAC180602MD_15 PDF预览

PXAC180602MD_15

更新时间: 2024-11-15 01:23:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 1270K
描述
Thermally-Enhanced High Power RF LDMOS FET

PXAC180602MD_15 数据手册

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PXAC180602MD  
Thermally-Enhanced High Power RF LDMOS FET  
60 W, 28 V, 1805 – 1880 MHz  
Description  
The PXAC180602MD is a 60-watt LDMOS FET with an asym-  
metrical design intended for use in multi-standard cellular power  
amplifier applications in the 1805 to 1880 MHz frequency band.  
Features include dual-path design, input matching, high gain and  
thermally-enhanced package with earless flanges. Manufactured  
with Infineon's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
PXAC180602MD  
Package PG-HB1DSO-4-1  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz  
3GPP WCDMA signal,  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetric Doherty design  
- Main : P1dB = 20 W Typ  
- Peak : P1dB = 40 W Typ  
PAR = 10 dB, 3.84 MHz BW  
24  
20  
16  
12  
8
75  
50  
25  
0
•ꢀ Typical Pulsed CW performance, 1880 MHz,  
28 V, 160 µs pulse width, 10% duty cycle, class AB,  
Doherty Configuration  
Efficiency  
- Output power at P  
- Efficiency = 58%  
- Gain at P  
= 10 W  
1dB  
Gain  
= 19 dB  
3dB  
•ꢀ Integrated ESD protection  
•ꢀ Human Body Model, Class 1B (per ANSI/ESDA/  
-25  
-50  
-75  
PAR @ 0.01% CCDF  
JEDEC JS-001)  
4
•ꢀ Low thermal resistance  
•ꢀ Pb-free and RoHS compliant  
0
pxac180602md_g1  
27  
31  
35  
39  
43  
47  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)  
= 28 V, I = 80 mA, P = 8.9 W avg, V = 160 mA–1.3 V, ƒ = 1840 MHz, 3GPP signal, channel bandwidth = 3.84  
V
DD  
DQ  
OUT  
GSPK  
1
MHz, peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
16.5  
51.0  
Typ  
17.7  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
hD  
54.5  
%
ACPR  
–27.6  
–25  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 02.1, 2015-06-18  

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