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PTH12050Y

更新时间： 2024-09-13 22:44:15

品牌	Logo	应用领域
德州仪器 - TI		存储双倍数据速率
页数	文件大小	规格书
7页	266K
描述
6-A Non-Isolated DDR/QDR Memory Bus Termination Modules

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PTH12050Y 数据手册

PTHxx050Y —Series

6-A Non-Isolated DDR/QDR Memory

Bus Termination Modules

SLTS221 – MARCH 2004

Features

• V_TTBus Termination Output

• Efficiencies up to 88 %

• 50 W/in³ Power Density

• Output Over-Current Protection

(Non-Latching, Auto-Reset)

• Safety Agency Approvals (Pending):

UL/cUL60950, EN60950, VDE

• Point-of-Load Alliance (POLA)

Compatible

(Output Tracks the System V_REF

• 6 A Output Current (8 A Peak)

• 3.3-V, 5-V or 12-V Input Voltage

• DDR & QDR Compatible

)

• On/Off Inhibit (for V_TTStandby)

• Under-Voltage Lockout

• Operating Temp: –40 to +85 °C

NOMINAL

SIZE

=0.87

0.5

(22,1 mm x 12,57 mm)

Description

Pin Configuration

The PTHxx050Y are a series of ready-

to-use switching regulator modules from

Texas Instruments designed specifically for

bus termination in DDR and QDR memory

applications. Operating from either a 3.3-V,

5-V or 12-V input, the modules generate

a V_TToutput that will source or sink up

to 6 A of current (8 A transient) to accu-

rately track their V_REFinput. V_TTis the

required bus termination supply voltage,

and V_REFis the reference voltage for the

memory and chipset bus receiver com-

parators. V_REFis usually set to half the

V_DDQpower supply voltage.

output to provide state-of-the-art step-

down switching conversion. The products

are small in size (0.87 in × 0.5 in), and are

an ideal choice where space, performance,

and high efficiency are desired, along with

the convenience of a ready-to-use module.

Operating features include an on/off

inhibit and output over-current protection

(source mode only). The on/off inhibit

feature allows the V_TTbus to be turned

off to save power in a standby mode of

operation.

Pin Function

GND

V_REF

V_IN

Inhibit *

No Connect

V_TT

Denotes negative logic:

Open

= V_TTOutput On

Ground = V_TTOutput Off

Package options include both through-

hole and surface mount configurations.

Both the PTHxx050Y series employs

an actively switched synchronous rectifier

Standard Application

V_IN

V_DDQ

V_REF

1 k

1 %

V_TT

PTHxx050Y

(Top View)

1 k

1 %

Co_n

hf-Ceramic

Co₁

Low-ESR

(Required)

Co₂

Ceramic

(Optional)

C_IN

(Required)

SSTL-2

Data/

Address

Bus

Q₁

BSS138

(Optional)

Standby

GND

= Required electrolytic capacitor; 220 µF (3.3-/5-V input), 560 µF (12-V input).

Co₁= Required low-ESR electrolyitic capacitor; 470 µF (3.3-/5-V input), 940 µF (12-V input).

Co₂= Ceramic capacitance for optimum response to a 3-A ( 1.5-A) load transient.; 200 µF (3.3-/5-V input), 400 µF (12-V input).

Co_n= Distributed hf-ceramic decoupling capacitors for V_TTbus; as recommended for DDR memory appications.

For technical support and further information, visit http://power.ti.com

12 3 4 5 6 7

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与PTH12050Y相关器件

型号	品牌	获取价格	描述	数据表
PTH12050YAD	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS
PTH12050YADT	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS
PTH12050YAH	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS
PTH12050YAH	TI	获取价格	6A 12V 输入非隔离式 DDR/QDR 存储器总线终端模块 \| EUU \| 6 \| -
PTH12050YAHT	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS
PTH12050YAS	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS
PTH12050YAS	TI	获取价格	6A 12V 输入非隔离式 DDR/QDR 存储器总线终端模块 \| EUV \| 6 \| -
PTH12050YAST	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS
PTH12050YAST	TI	获取价格	6A 12V 输入非隔离式 DDR/QDR 存储器总线终端模块 \| EUV \| 6 \| -
PTH12050YAZ	EMERSON-NETWORKPOWER	获取价格	DC-DC CONVERTERS

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