5秒后页面跳转
PN2907ARLRAG PDF预览

PN2907ARLRAG

更新时间: 2024-11-01 06:04:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
6页 101K
描述
General Purpose Transistor PNP Silicon

PN2907ARLRAG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.28最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):100 ns最大开启时间(吨):45 ns
Base Number Matches:1

PN2907ARLRAG 数据手册

 浏览型号PN2907ARLRAG的Datasheet PDF文件第2页浏览型号PN2907ARLRAG的Datasheet PDF文件第3页浏览型号PN2907ARLRAG的Datasheet PDF文件第4页浏览型号PN2907ARLRAG的Datasheet PDF文件第5页浏览型号PN2907ARLRAG的Datasheet PDF文件第6页 
                                           
-60  
Vdc  
Emitter  
                                        
-ꢁBase Voltage  
V
-5.0  
-600  
Vdc  
Collector  
Collector  
                                           
V
CEO  
V
CBO  
PN2907A  
Preferred Device  
General Purpose Transistor  
PNP Silicon  
Features  
ꢀThese are Pb-Free Devices*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
-ꢁEmitter Voltage  
-ꢁBase Voltage  
Symbol  
Value  
-60  
Unit  
Vdc  
BASE  
1
EMITTER  
EBO  
Collector Current - Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
TO-92  
CASE 29  
STYLE 1  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
- ꢁ55 to +150  
°C  
stg  
1
1
THERMAL CHARACTERISTICS  
Characteristic  
2
2
3
3
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Thermal Resistance, Junction- to- Ambient  
Thermal Resistance, Junction-to-Case  
R
q
JA  
JC  
R
q
83.3  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAM  
PN2  
907A  
YWWꢀG  
G
PN2907A = Device Code  
Y
= Year  
WW  
G
= Work Week  
= Pb-Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Preferred devices are recommended choices for future use  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
May, 2007 - Rev. 3  
1
Publication Order Number:  
PN2907A/D  

PN2907ARLRAG 替代型号

型号 品牌 替代类型 描述 数据表
BC33725TA ONSEMI

类似代替

NPN Bipolar Transistor
KSP2907ATF FAIRCHILD

功能相似

PNP General Purpose Amplifier
KSP2907ATA FAIRCHILD

功能相似

PNP General Purpose Amplifier

与PN2907ARLRAG相关器件

型号 品牌 获取价格 描述 数据表
PN2907ARM ETC

获取价格

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 800MA I(C) | TO-92
PN2907AT/R ETC

获取价格

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 800MA I(C) | TO-92
PN2907A-T92-B UTC

获取价格

PNP GENERAL PURPOSE AMPLIFIER
PN2907A-T92-K UTC

获取价格

PNP GENERAL PURPOSE AMPLIFIER
PN2907ATA FAIRCHILD

获取价格

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor
PN2907ATA ONSEMI

获取价格

General Purpose Transistor PNP Silicon
PN2907ATAR FAIRCHILD

获取价格

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor
PN2907ATAR ONSEMI

获取价格

General Purpose Transistor PNP Silicon
PN2907ATF FAIRCHILD

获取价格

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor
PN2907ATF ONSEMI

获取价格

General Purpose Transistor PNP Silicon