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PN2907ATRB PDF预览

PN2907ATRB

更新时间: 2024-11-05 13:12:27
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 319K
描述
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

PN2907ATRB 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.66Is Samacsys:N
基于收集器的最大容量:8 pF集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
VCEsat-Max:1.6 VBase Number Matches:1

PN2907ATRB 数据手册

 浏览型号PN2907ATRB的Datasheet PDF文件第2页 
PN2906 PN2906A  
PN2907 PN2907A  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR PN2906, PN2907  
series types are silicon PNP epitaxial planar transistors  
designed for small signal, general purpose switching  
applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
PN2906  
PN2907  
60  
PN2906A  
PN2907A  
60  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
60  
V
V
5.0  
600  
625  
Continuous Collector Current  
Power Dissipation  
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
PN2906  
PN2907  
PN2906A  
PN2907A  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
nA  
I
V
=50V  
-
20  
-
10  
50  
-
CBO  
CEV  
CB  
CE  
I
V
=30V, V =0.5V  
-
50  
-
-
nA  
V
EB  
BV  
BV  
BV  
I =10μA  
60  
60  
CBO  
C
I =10mA  
40  
-
60  
-
V
CEO  
C
I =10μA  
5.0  
-
5.0  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
-
0.4  
1.6  
1.3  
2.6  
-
-
0.4  
1.6  
1.3  
2.6  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
-
-
V
C
B
I =500mA, I =50mA  
-
-
V
C
B
f
V
=20V, I =50mA, f=200MHz  
200  
200  
MHz  
pF  
pF  
ns  
ns  
T
CE  
CB  
EB  
CC  
CC  
C
C
V
V
V
V
=10V, I =0, f=1.0MHz  
-
-
-
-
8.0  
30  
45  
100  
-
-
-
-
8.0  
30  
45  
100  
ob  
ib  
E
C
=2.0V, I =0, f=1.0MHz  
C
t
t
=30V, I =150mA, I =15mA  
on  
off  
C
B1  
=6.0V, I =150mA, I =I =15mA  
C
B1 B2  
R2 (30-January 2012)  

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