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PN2907ATRETIN/LEAD PDF预览

PN2907ATRETIN/LEAD

更新时间: 2024-11-26 18:54:43
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 318K
描述
Transistor

PN2907ATRETIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.69
最大集电极电流 (IC):0.6 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):200 MHzBase Number Matches:1

PN2907ATRETIN/LEAD 数据手册

 浏览型号PN2907ATRETIN/LEAD的Datasheet PDF文件第2页 
PN2906 PN2906A  
PN2907 PN2907A  
www.centralsemi.com  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR PN2906, PN2907  
series types are silicon PNP epitaxial planar transistors  
designed for small signal, general purpose switching  
applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
PN2906  
PN2907  
60  
PN2906A  
PN2907A  
60  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
60  
V
V
5.0  
600  
625  
Continuous Collector Current  
Power Dissipation  
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
PN2906  
PN2907  
PN2906A  
PN2907A  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
nA  
I
V
=50V  
-
20  
-
10  
50  
-
CBO  
CEV  
CB  
CE  
I
V
=30V, V =0.5V  
-
50  
-
-
nA  
V
EB  
BV  
BV  
BV  
I =10μA  
60  
60  
CBO  
C
I =10mA  
40  
-
60  
-
V
CEO  
C
I =10μA  
5.0  
-
5.0  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
-
0.4  
1.6  
1.3  
2.6  
-
-
0.4  
1.6  
1.3  
2.6  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
-
-
V
C
B
I =500mA, I =50mA  
-
-
V
C
B
f
V
=20V, I =50mA, f=200MHz  
200  
200  
MHz  
pF  
pF  
ns  
ns  
T
CE  
CB  
EB  
CC  
CC  
C
C
V
V
V
V
=10V, I =0, f=1.0MHz  
-
-
-
-
8.0  
30  
45  
100  
-
-
-
-
8.0  
30  
45  
100  
ob  
ib  
E
C
=2.0V, I =0, f=1.0MHz  
C
t
t
=30V, I =150mA, I =15mA  
on  
off  
C
B1  
=6.0V, I =150mA, I =I =15mA  
C
B1 B2  
R2 (30-January 2012)  

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