Datasheet > PN2907BU

PN2907BU

更新时间： 2024-09-16 11:11:47

品牌	Logo	应用领域
安森美 - ONSEMI		放大器
页数	文件大小	规格书
4页	99K
描述
PNP 通用放大器

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PN2907BU 数据手册

DATA SHEET

www.onsemi.com

PNP General-Purpose

Transistor

PN2907

TO−92 3 4.825x4.76

CASE 135AN

Description

This device is designed for use with general−purpose amplifiers and

switches requiring collector currents to 500 mA.

These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS compliant.

MARKING DIAGRAM

APN

2907

YWW

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note 1, 2)

Symbol

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Value

−40

Unit

CEO

CBO

EBO

−60

−5.0

PN2907 = Specific Device Code

Collector Current − Continuous

−800

°C

= Assembly Site

= Year of Production

= Work Week Number

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low−duty cycle operations.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Max

(Note 3)

Symbol

Parameter

Total Device Dissipation

Unit

625

Derate Above 25°C

5.0

mW/°C

°C/W

Thermal Resistance, Junction to Case

83.3

200

Thermal Resistance, Junction to Ambient

3. PCB size: FR−4 76 x 114 x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with

minimum land pattern size.

Publication Order Number:

August, 2022 − Rev. 4

PN2907/D

12 3 4

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