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PMST5550T/R PDF预览

PMST5550T/R

更新时间: 2024-09-17 13:12:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管高压
页数 文件大小 规格书
8页 61K
描述
TRANSISTOR 300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

PMST5550T/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.19最大集电极电流 (IC):0.3 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.25 V
Base Number Matches:1

PMST5550T/R 数据手册

 浏览型号PMST5550T/R的Datasheet PDF文件第2页浏览型号PMST5550T/R的Datasheet PDF文件第3页浏览型号PMST5550T/R的Datasheet PDF文件第4页浏览型号PMST5550T/R的Datasheet PDF文件第5页浏览型号PMST5550T/R的Datasheet PDF文件第6页浏览型号PMST5550T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PMST5550; PMST5551  
NPN high-voltage transistors  
1999 Apr 29  
Product specification  
Supersedes data of 1997 May 20  

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