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PMST5550-TAPE-13 PDF预览

PMST5550-TAPE-13

更新时间: 2024-11-07 15:48:11
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管晶体管
页数 文件大小 规格书
3页 69K
描述
TRANSISTOR 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

PMST5550-TAPE-13 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.19
最大集电极电流 (IC):0.6 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.25 V
Base Number Matches:1

PMST5550-TAPE-13 数据手册

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