Datasheet > PMGD175XNE

PMGD175XNE

更新时间： 2024-11-15 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	720K
描述
30 V, Dual N-channel Trench MOSFETProduction

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PMGD175XNE 数据手册

PMGD175XNE

30 V, Dual N-channel Trench MOSFET

15 April 2016

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363

(TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

•

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-12

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 0.9 A; T_j= 25 °C

[1]

0.95

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

211

252

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...16

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