Datasheet > PMGD290UCEAX

PMGD290UCEAX

更新时间： 2024-11-14 20:50:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
21页	355K
描述
PMGD290UCEA - 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET TSSOP 6-Pin

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中文翻译

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技术参数
数据手册

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PMGD290UCEAX 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TSSOP	针数：	6
Reach Compliance Code：	compliant	风险等级：	5.56
Base Number Matches：	1

PMGD290UCEAX 数据手册

PMGD290UCEA

20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET

28 March 2014

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very

small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Very fast switching

•

Trench MOSFET technology

2 kV ESD protection

AEC-Q101 qualified

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

Automotive applications

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 500 mA; T_j= 25 °C

290

380

mΩ

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -400 mA; T_j= 25 °C

670

850

mΩ

TR1 (N-channel)

V_DS

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= 4.5 V; T_amb= 25 °C

[1]

725

TR2 (P-channel)

V_DS

drain-source voltage

T_j= 25 °C

-20

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