Datasheet > PMBT2907AM

PMBT2907AM

更新时间： 2024-11-16 11:14:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	217K
描述
60 V, 600 mA PNP switching transistorProduction

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技术参数
数据手册

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PMBT2907AM 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	1.47	Base Number Matches：	1

PMBT2907AM 数据手册

PMBT2907AM

60 V, 600 mA PNP switching transistor

21 September 2018

Product data sheet

1. General description

PNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device

(SMD) plastic package.

NPN complement: PMBT2222AM

2. Features and benefits

•

High current (max. 600 mA)

•

Low voltage (max. 60 V)

Leadless ultra small SMD plastic package

Low package height of 0.50 mm

Power dissipation comparable to SOT23

AEC-Q101 qualified

3. Applications

•

Switching and linear applications

Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-600

-800

300

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain

V_CE= -10 V; I_C= -150 mA

V_CE= -10 V; I_C= -500 mA

[1]

100

[1] Pulsed test: t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...13

中文翻译

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