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PMBT2907T/R PDF预览

PMBT2907T/R

更新时间: 2024-11-15 18:43:19
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
8页 62K
描述
600mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3

PMBT2907T/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.11Is Samacsys:N
最大集电极电流 (IC):0.6 A基于收集器的最大容量:8 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):365 ns
最大开启时间(吨):40 nsVCEsat-Max:1.6 V
Base Number Matches:1

PMBT2907T/R 数据手册

 浏览型号PMBT2907T/R的Datasheet PDF文件第2页浏览型号PMBT2907T/R的Datasheet PDF文件第3页浏览型号PMBT2907T/R的Datasheet PDF文件第4页浏览型号PMBT2907T/R的Datasheet PDF文件第5页浏览型号PMBT2907T/R的Datasheet PDF文件第6页浏览型号PMBT2907T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PMBT2907; PMBT2907A  
PNP switching transistors  
Product data sheet  
2004 Jan 16  
Supersedes data of 1999 Apr 27  

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