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PMBT3904MB PDF预览

PMBT3904MB

更新时间: 2024-11-15 19:53:55
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 339K
描述
SMALL SIGNAL TRANSISTOR

PMBT3904MB 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:1 X 0.60 MM, 0.37 MM HIEGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PBCC-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
极性/信道类型:NPN参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子面层:TIN
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

PMBT3904MB 数据手册

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PMBT3904MB  
SOT883B  
40 V, 200 mA NPN switching transistor  
Rev. 1 — 7 March 2012  
Product data sheet  
1. Product profile  
1.1 General description  
NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted  
Device (SMD) plastic package.  
PNP complement: PMBT3906MB.  
1.2 Features and benefits  
Single general-purpose switching transistor  
AEC-Q101 qualified  
Ultra small SMD plastic package  
Board-space reduction  
Low package height of 0.37 mm  
1.3 Applications  
General-purpose switching and amplification  
Mobile applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
40  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
200  
300  
mA  
hFE  
DC current gain  
VCE = 1 V;  
IC = 10 mA  
100  
180  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
base  
Simplified outline  
Graphic symbol  
3
1
2
emitter  
3
3
collector  
1
2
Transparent  
top view  
2
sym021  
 
 
 
 
 
 

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