Datasheet > PMBT2907AYS

PMBT2907AYS

更新时间： 2024-10-01 11:12:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	698K
描述
60V, 600 mA, double PNP switching transistorProduction

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PMBT2907AYS 数据手册

PMBT2907AYS

60V, 600 mA, double PNP switching transistor

26 June 2015

Product data sheet

1. General description

Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted

Device (SMD) plastic package.

Double NPN complement: PMBT2222AYS

2. Features and benefits

Double general-purpose switching transistor

AEC-Q101 qualified

•

3. Applications

Switching and linear amplification

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

h_FE

DC current gain

V_CE= -10 V; I_C= -150 mA; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

100

300

Per transistor

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-600

12 3 4 5 6 7...15

中文翻译

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