Datasheet > PM39LV040-55VC

PM39LV040-55VC

更新时间： 2024-09-11 04:58:43

品牌	Logo	应用领域
美国芯成 - ISSI		光电二极管内存集成电路
页数	文件大小	规格书
20页	1152K
描述
Flash, 512KX8, 55ns, PDSO32,

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技术参数
数据手册

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PM39LV040-55VC 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
最长访问时间：	55 ns	命令用户界面：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G32
内存密度：	4194304 bit	内存集成电路类型：	FLASH
内存宽度：	8	部门数/规模：	128
端子数量：	32	字数：	524288 words
字数代码：	512000	最高工作温度：	85 °C
最低工作温度：		组织：	512KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP32,.56,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
电源：	3/3.3 V	认证状态：	Not Qualified
部门规模：	4K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.02 mA
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
Base Number Matches：	1

PM39LV040-55VC 数据手册

Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040

512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory

FEATURES

Single Power Supply Operation

- Low voltage range: 2.7 V - 3.6 V

• Automatic Erase and Byte Program

- Build-in automatic program verification

- Typical 16 µs/byte programming time

- Typical 55 ms sector/block/chip erase time

• Memory Organization

- Pm39LV512: 64K x 8 (512 Kbit)

- Pm39LV010: 128K x 8 (1 Mbit)

- Pm39LV020: 256K x 8 (2 Mbit)

- Pm39LV040: 512K x 8 (4 Mbit)

• Low Power Consumption

- Typical 4 mA active read current

- Typical 8 mA program/erase current

- Typical 0.1 µA CMOS standby current

• High Performance Read

- 55/70 ns access time

• High Product Endurance

- Guarantee 100,000 program/erase cycles per

single sector (preliminary)

- Minimum 20 years data retention

• Cost Effective Sector/Block Architecture

- Uniform 4 Kbyte sectors

- Uniform 64 Kbyte blocks (sector group - except

Pm39LV512)

• Industrial Standard Pin-out and Packaging

- 32-pin (8 mm x 14 mm) VSOP

- 32-pin PLCC

• Data# Polling and Toggle Bit Features

• Hardware Data Protection

- Optional lead-free (Pb-free) package

GENERAL DESCRIPTION

The Pm39LV512/010/020/040 are 512 Kbit/1 Mbit/2 Mbit/4 Mbit 3.0 Volt-only Flash Memories. These devices are

designed to use a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and

program operations. The 12.0 Volt V_PPpower supply for program and erase operations are not required. The devices

can be programmed in standard EPROM programmers as well.

The memory array of Pm39LV512 is divided into uniform 4 Kbyte sectors for data or code storage. The memory

arrays of Pm39LV010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks (sector group -

consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly erase a memory

area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in others.

The chip erase feature allows the whole memory array to be erased in one single erase operation. The devices can

be programmed on a byte-by-byte basis after performing the erase operation.

The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The

program operation is executed by issuing the program command code into command register. The internal control

logic automatically handles the programming voltage ramp-up and timing. The erase operation is executed by

issuing the chip erase, block, or sector erase command code into command register. The internal control logic

automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been

programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the

progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or

the Toggle Bit on I/O6.

The Pm39LV512/010/020/040 are manufactured on pFLASH™’s advanced nonvolatile CMOS technology. The de-

vices are offered in 32-pin VSOP and PLCC packages with 70 ns access time.

Chingis Technology Corporation

Issue Date: April, 2006 Rev:1.6

12 3 4 5 6 7...20

中文翻译

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与PM39LV040-55VC相关器件

型号	品牌	获取价格	描述	数据表
PM39LV040-70JC	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV040-70JCE	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV040-70VC	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV040-70VCE	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV512	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV512-55JCE	ISSI	获取价格	Flash, 64KX8, 55ns, PQCC32,
PM39LV512-55VC	ISSI	获取价格	Flash, 64KX8, 55ns, PDSO32,
PM39LV512-70JC	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV512-70JCE	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV512-70VC	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory

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