Datasheet > PKCE9BB

PKCE9BB

更新时间： 2024-09-19 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
6页	268K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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PKCE9BB 数据手册

P-Channel Logic Level Enhancement Mode

Field Effect Transistor

PKCE9BB

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-40V

R_DS(ON)

I_D

-92A

3.95mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

G. GATE

D. DRAIN

S. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

-40

UNITS

V_DS

V_GS

Gate-Source Voltage

±25

-92

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

-58

Continuous Drain Current⁴

I_D

-24

-19

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

-200

-57

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

162

Power Dissipation³

P_D

4.1

2.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

L-24-3

REV1.0

12 3 4 5 6

中文翻译

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