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PHE13007,127 PDF预览

PHE13007,127

更新时间: 2024-11-14 21:09:27
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关晶体管
页数 文件大小 规格书
9页 136K
描述
PHE13007

PHE13007,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.21
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHE13007,127 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PHE13007  
Silicon Diffused Power Transistor  
Product specification  
February 1999  

PHE13007,127 替代型号

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BDX53CTU ONSEMI

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