Datasheet > PHD20N06T

PHD20N06T

更新时间： 2024-09-17 20:25:43

品牌	Logo	应用领域
飞利浦 - PHILIPS		开关脉冲晶体管
页数	文件大小	规格书
13页	119K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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PHD20N06T 技术参数

PHD20N06T

N-channel TrenchMOS™ transistor

Rev. 01 — 22 February 2001

Product speciﬁcation

M3D300

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

PHD20N06T in SOT428 (D-PAK).

2. Features

■ TrenchMOS™ technology

■ Low on-state resistance

■ Fast switching.

3. Applications

■ Switched mode power supplies

■ DC to DC converters

■ General purpose switch.

4. Pinning information

Table 1: Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

drain (d)

source (s)

drain (d)

MBB076

Top view

MBK091

SOT428 (D-PAK)

1. TrenchMOS is a trademark of Royal Philips Electronics.

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
PHD20R-H	AUK	获取价格	Board Connector, 20 Contact(s), 2 Row(s), Male, Right Angle, 0.079 inch Pitch, Solder Term
PHD21N06LT	NXP	获取价格	TrenchMOS transistor Logic level FET
PHD21N06LT,118	NXP	获取价格	N-channel TrenchMOS logic level FET DPAK 3-Pin
PHD22D-H	AUK	获取价格	Board Connector, 22 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Termina
PHD22NQ20T	NXP	获取价格	N-channel TrenchMOS?? standard level FET
PHD22NQ20T-01	NXP	获取价格	N-channel TrenchMOS?? standard level FET
PHD23NQ10T	NXP	获取价格	N-channel TrenchMOS transistor
PHD23NQ10T,118	NXP	获取价格	PHD23NQ10T
PHD24D-H	AUK	获取价格	Board Connector, 24 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Termina
PHD24H-H	AUK	获取价格	Board Connector, 24 Contact(s), 2 Row(s), Female, 0.079 inch Pitch, Wire Terminal, Locking