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PHD21N06LT PDF预览

PHD21N06LT

更新时间: 2024-02-15 09:03:38
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关脉冲
页数 文件大小 规格书
10页 85K
描述
TrenchMOS transistor Logic level FET

PHD21N06LT 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.71配置:Single
最大漏极电流 (Abs) (ID):21 AFET 技术:METAL-OXIDE SEMICONDUCTOR
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):69 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

PHD21N06LT 数据手册

 浏览型号PHD21N06LT的Datasheet PDF文件第2页浏览型号PHD21N06LT的Datasheet PDF文件第3页浏览型号PHD21N06LT的Datasheet PDF文件第4页浏览型号PHD21N06LT的Datasheet PDF文件第5页浏览型号PHD21N06LT的Datasheet PDF文件第6页浏览型号PHD21N06LT的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Logic level FET  
PHP21N06LT, PHB21N06LT, PHD21N06LT  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
VDSS = 55 V  
d
ID = 21 A  
R
DS(ON) 75 m(VGS = 5 V)  
g
RDS(ON) 70 m(VGS = 10 V)  
s
GENERAL DESCRIPTION  
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.  
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching  
applications.  
The PHP21N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB21N06LT is supplied in the SOT404 surface mounting package.  
The PHD21N06LT is supplied in the SOT428 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
SOT428  
PIN  
1
DESCRIPTION  
tab  
tab  
tab  
gate  
2
drain1  
source  
3
2
2
tab drain  
1
3
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
55  
55  
± 13  
21  
14.7  
84  
69  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
- 55  
175  
1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.  
September 1998  
1
Rev 1.400  

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