是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | DIP, DIP20,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.87 | 架构: | PAD-TYPE |
JESD-30 代码: | R-PDIP-T20 | JESD-609代码: | e0 |
输入次数: | 16 | 输出次数: | 8 |
产品条款数: | 16 | 端子数量: | 20 |
最高工作温度: | 70 °C | 最低工作温度: | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP20,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | 5 V |
可编程逻辑类型: | OT PLD | 传播延迟: | 5 ns |
认证状态: | Not Qualified | 子类别: | Programmable Logic Devices |
标称供电电压: | 5 V | 表面贴装: | NO |
技术: | TTL | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PHD18D-H | AUK |
获取价格 |
Board Connector, 18 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Termina | |
PHD18H-H | AUK |
获取价格 |
Board Connector, 18 Contact(s), 2 Row(s), Female, 0.079 inch Pitch, Wire Terminal, Locking | |
PHD18NQ10T | NXP |
获取价格 |
N-channel TrenchMOS transistor | |
PHD18NQ10T,118 | NXP |
获取价格 |
N-channel TrenchMOS standard level FET DPAK 3-Pin | |
PHD18NQ10T/T3 | NXP |
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18A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET | |
PHD18R-H | AUK |
获取价格 |
Board Connector, 18 Contact(s), 2 Row(s), Male, Right Angle, 0.079 inch Pitch, Solder Term | |
PHD20N06T | NXP |
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N-channel TrenchMOS transistor | |
PHD20N06T | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
PHD20R-H | AUK |
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Board Connector, 20 Contact(s), 2 Row(s), Male, Right Angle, 0.079 inch Pitch, Solder Term | |
PHD21N06LT | NXP |
获取价格 |
TrenchMOS transistor Logic level FET |