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PESD5V0S4UF,115 PDF预览

PESD5V0S4UF,115

更新时间: 2024-11-16 20:03:07
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
13页 76K
描述
PESD3V3S4UF; PESD5V0S4UF - Unidirectional quadruple ESD protection diode arrays SON 6-Pin

PESD5V0S4UF,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1.45 MM, 0.50 MM HEIGHT, PLASTIC, SMD, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:7.66最大击穿电压:7.14 V
最小击穿电压:6.46 V击穿电压标称值:6.8 V
最大钳位电压:12 V配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N6JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:110 W
元件数量:4端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:40Base Number Matches:1

PESD5V0S4UF,115 数据手册

 浏览型号PESD5V0S4UF,115的Datasheet PDF文件第2页浏览型号PESD5V0S4UF,115的Datasheet PDF文件第3页浏览型号PESD5V0S4UF,115的Datasheet PDF文件第4页浏览型号PESD5V0S4UF,115的Datasheet PDF文件第5页浏览型号PESD5V0S4UF,115的Datasheet PDF文件第6页浏览型号PESD5V0S4UF,115的Datasheet PDF文件第7页 
PESD3V3S4UF; PESD5V0S4UF  
Unidirectional quadruple ESD protection diode arrays  
Rev. 01 — 17 January 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small  
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four  
signal lines from the damage caused by ESD and other transients.  
1.2 Features  
I ESD protection of up to four lines  
I ESD protection up to 30 kV  
I IEC 61000-4-2; level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 10 A  
I AEC-Q101 qualified  
I Max. peak pulse power: PPP = 110 W  
I Low clamping voltage: VCL = 11 V  
I Ultra low leakage current: IRM = 4 nA  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff voltage  
PESD3V3S4UF  
PESD5V0S4UF  
diode capacitance  
PESD3V3S4UF  
PESD5V0S4UF  
-
-
-
-
3.3  
5.0  
V
V
Cd  
f = 1 MHz; VR = 0 V  
-
-
110  
85  
300  
220  
pF  
pF  
 
 
 
 
 

PESD5V0S4UF,115 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0S4UF NXP

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Unidirectional quadruple ESD protection diode arrays

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