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PDTC114EK,135 PDF预览

PDTC114EK,135

更新时间: 2024-02-21 20:50:33
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
14页 92K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59, 3 PIN, BIP General Purpose Small Signal

PDTC114EK,135 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.59其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC114EK,135 数据手册

 浏览型号PDTC114EK,135的Datasheet PDF文件第1页浏览型号PDTC114EK,135的Datasheet PDF文件第2页浏览型号PDTC114EK,135的Datasheet PDF文件第3页浏览型号PDTC114EK,135的Datasheet PDF文件第5页浏览型号PDTC114EK,135的Datasheet PDF文件第6页浏览型号PDTC114EK,135的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
NPN resistor-equipped transistors;  
R1 = 47 k, R2 = 47 kΩ  
PDTC144E series  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
VERSION  
PDTC144EE  
PDTC144EEF  
PDTC144EK  
PDTC144EM  
plastic surface mounted package; 3 leads  
plastic surface mounted package; 3 leads  
plastic surface mounted package; 3 leads  
SOT416  
SOT490  
SOT346  
leadless ultra small plastic package; 3 solder lands; body  
SOT883  
1.0 × 0.6 × 0.5 mm  
PDTC144ES  
PDTC144ET  
PDTC144EU  
plastic single-ended leaded (through hole) package; 3 leads  
plastic surface mounted package; 3 leads  
SOT54  
SOT23  
SOT323  
plastic surface mounted package; 3 leads  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
VCBO  
VCEO  
VEBO  
VI  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
50  
UNIT  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
V
V
V
open base  
50  
10  
open collector  
positive  
+40  
10  
100  
100  
V
negative  
V
IO  
output current (DC)  
peak collector current  
total power dissipation  
SOT54  
mA  
mA  
ICM  
Ptot  
T
amb 25 °C  
note 1  
500  
250  
250  
200  
150  
250  
250  
+150  
150  
+150  
mW  
mW  
mW  
mW  
mW  
mW  
mW  
°C  
SOT23  
note 1  
SOT346  
note 1  
SOT323  
note 1  
SOT416  
note 1  
SOT490  
notes 1 and 2  
notes 2 and 3  
SOT883  
Tstg  
Tj  
storage temperature  
junction temperature  
operating ambient temperature  
65  
°C  
Tamb  
65  
°C  
Notes  
1. Refer to standard mounting conditions.  
2. Reflow soldering is the only recommended soldering method.  
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.  
2004 Aug 17  
4
 
 

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