PDTC114EMB

更新时间： 2024-11-28 12:21:59

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关
页数	文件大小	规格书
11页	699K
描述
NPN resistor-equipped transistor; R1 = 10 kÎ©, R2 = 10 kÎ©

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PDTC114EMB 数据手册

PDTC114EMB

SOT883B

NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Rev. 1 — 21 June 2012

Product data sheet

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA114EMB.

1.2 Features and benefits

 100 mA output current capability

 Reduces component count

 Built-in bias resistors

 Simplifies circuit design

 AEC-Q101 qualified

 Leadless ultra small SMD plastic

package

 Reduces pick and place costs

 Low package height of 0.37 mm

1.3 Applications

 Low-current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors

in digital applications

 Mobile applications

1.4 Quick reference data

Table 1.

Symbol

V_CEO

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter

voltage

open base

I_O

output current

100

bias resistor 1 (input)

bias resistor ratio

T_amb= 25 °C

kΩ

R2/R1

0.8

1.2

12 3 4 5 6 7...11

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