5秒后页面跳转
PDM4M3120S20AM PDF预览

PDM4M3120S20AM

更新时间: 2024-02-06 14:55:02
品牌 Logo 应用领域
IXYS 静态存储器内存集成电路
页数 文件大小 规格书
10页 108K
描述
SRAM Module, 1MX32, 20ns, CMOS, ANGLED, SIMM-72

PDM4M3120S20AM 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:20 ns其他特性:CAN ALSO BE CONFIGURED AS 1M X 32
JESD-30 代码:R-XSMA-N72内存密度:33554432 bit
内存集成电路类型:SRAM MODULE内存宽度:8
功能数量:1端子数量:72
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX8
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:SINGLEBase Number Matches:1

PDM4M3120S20AM 数据手册

 浏览型号PDM4M3120S20AM的Datasheet PDF文件第1页浏览型号PDM4M3120S20AM的Datasheet PDF文件第2页浏览型号PDM4M3120S20AM的Datasheet PDF文件第4页浏览型号PDM4M3120S20AM的Datasheet PDF文件第5页浏览型号PDM4M3120S20AM的Datasheet PDF文件第6页浏览型号PDM4M3120S20AM的Datasheet PDF文件第7页 
PRELIMINARY  
PDM4M3120  
Truth Table  
CS  
OE  
WE  
Mode  
Output  
Power  
1
2
Deselect/  
Power-down  
H
X
X
High-Z  
Standby  
Read  
L
L
L
L
X
H
H
L
DATA  
Active  
Active  
Active  
OUT  
Write  
DATA  
IN  
Deselect  
H
High-Z  
3
Absolute Maximum Ratings(1)  
4
Symbol  
Rating  
Terminal Voltage with Respect to V  
Com’l.  
Ind.  
Unit  
V
–0.5 to +4.6  
–10 to +85  
–55 to +125  
0 to +70  
1.0  
–0.5 to +4.6  
–10 to +85  
–65 to +150  
–40 to +85  
1.0  
V
TERM  
SS  
T
Temperature Under Bias  
Storage Temperature  
Operating Temperature  
Power Dissipation  
°C  
°C  
°C  
W
BIAS  
5
T
STG  
T
A
P
T
6
I
DC Output Current  
50  
50  
mA  
OUT  
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent  
damage to the device.This is a stress rating only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
7
Recommended DC Operating Conditions  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
9
V
V
Supply Voltage  
3.0  
0
3.3  
0
3.6  
0
V
CC  
Supply Voltage  
V
SS  
Commercial  
Industrial  
Ambient Temperature  
Ambient Temperature  
0
25  
25  
70  
85  
°C  
°C  
10  
11  
12  
–40  
Rev 1.1  
3

与PDM4M3120S20AM相关器件

型号 品牌 描述 获取价格 数据表
PDM4M3120S20M IXYS SRAM Module, 1MX32, 20ns, CMOS, SIMM-72

获取价格

PDM4M4030S25AM IXYS SRAM

获取价格

PDM4M4050S10AM IXYS SRAM

获取价格

PDM4M4050S15M IXYS SRAM

获取价格

PDM4M4060S10AM IXYS SRAM Module, 256KX32, 10ns, CMOS, ANGLED, SIMM-72

获取价格

PDM4M4060S10M IXYS SRAM Module, 256KX32, 10ns, CMOS, SIMM-72

获取价格