Datasheet > PD57002-E_10

PD57002-E_10

更新时间： 2024-11-25 06:02:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
23页	371K
描述
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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PD57002-E_10 数据手册

PD57002-E

PD57002S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ P = 2 W with 15dB gain @ 960 MHz / 28 V

OUT

■ New RF plastic package

Description

PowerSO-10RF

(formed lead)

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to 1

GHz. The device is designed for high gain and

broadband performance operating in common

source mode at 28 V. It is ideal for digital cellular

BTS applications requiring high linearity. The

PowerSO-10 plastic package, designed to offer

high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performance and ease of assembly. Mounting

recommendations are available in www.st.com/rf/

(look for application note AN1294).

PowerSO-10RF

(straight lead)

Figure 1.

Pin connection

Source

Drain

Gate

Table 1.

Device summary

Order code

Package

Packing

PD57002-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Tube

PD57002S-E

May 2010

Doc ID 12332 Rev 2

1/23

www.st.com

12 3 4 5 6 7...23

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