Datasheet > PD57030-E_10

PD57030-E_10

更新时间： 2024-09-29 11:48:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
18页	503K
描述
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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PD57030-E_10 数据手册

PD57030-E

PD57030S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ P = 30 W with 14dB gain @ 945 MHz / 28 V

OUT

■ New RF plastic package

Description

PowerSO-10RF

(formed lead)

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies

up to 1 GHz. The device boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. Device’s

superior linearity performance makes it an ideal

solution for base station applications. The

PowerSO-10RF

(straight lead)

PowerSO-10 plastic package, designed to offer

high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performance and ease of assembly. Mounting

recommendations are available in www.st.com/rf/

(look for application note AN1294)

Figure 1.

Pin connection

Source

Drain

Gate

Table 1.

Device summary

Order code

Package

Packing

PD57030-E

PD57030S-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Tube

PD57030TR-E

PD57030STR-E

Tape and reel

May 2010

Doc ID 12613 Rev 2

1/18

www.st.com

12 3 4 5 6 7...18

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