PD57070-E

更新时间： 2024-01-03 20:28:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
22页	484K
描述
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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替代型号

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PD57070-E 数据手册

PD57070-E

PD57070S-E

RF POWER Transistors, LDMOST plastic family

N-Channel enhancement-mode lateral MOSFETs

General features

■ Excellent thermal stability

■ Common source configuration

■ P = 70W with 14.7dB gain @ 945MHz / 28V

OUT

■ New RF plastic package

PowerSO-10RF

(formed lead)

Description

The PD57070 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 28 V in common source mode at

frequencies of up to 1 GHz. PD57070 boasts the

excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first

true SMD plastic RF power package, PowerSO-

10RF. PD57070’s superior linearity performance

makes it an ideal solution for base station

applications.

PowerSO-10RF

(straight lead)

Pin connection

Source

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of

assembly.

Drain

Gate

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Order codes

Part number

Package

Marking

Packaging

PD57070-E

PD57070S-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PD57070

PD57070S

PD57070

Tube

PD57070TR-E

PD57070STR-E

Tape and reel

PD57070S

July 2006

Rev 1

1/22

www.st.com

12 3 4 5 6 7...22

中文翻译

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PD57070-E 替代型号

型号	品牌	替代类型	描述	数据表
PD57070S-E	STMICROELECTRONICS	完全替代	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PD57070S	STMICROELECTRONICS	类似代替	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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