Datasheet > PD5M-0XX

PD5M-0XX

更新时间： 2024-11-18 03:04:15

品牌	Logo	应用领域
ANADIGICS		光电二极管光电二极管
页数	文件大小	规格书
2页	163K
描述
5mm InGaAs Photodiode

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中文翻译

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PD5M-0XX 数据手册

PD5M

5mm InGaAs Photodiode

FEATURES

•

Planar Structure

Dielectric Passivation

High Shunt Resistance

High Responsivity

APPLICATIONS

PD5M-0xx

Ceramic Sub-Mount

PD5M-1xx

TO8 can Package

•

Sensing

High Sensitivity Instrumentation

PRODUCT DESCRIPTION

The PD5M is an InGaAs photodiode with a

photosensitive region 5mm in diameter.

Applications include sensing and other high

sensitivity instrumentation. Class A devices

feature very low dark current and high shunt

resistance.

High reliability is assured through planar

semiconductor design and dielectric passivation.

The device can be assembled on a ceramic sub-

mount or in an hermetic TO8 can. Custom

packages are an option.

ELECTRICAL CHARACTERISTICS

Table 1: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

Dark Current (I_D) ⁽¹⁾

0.80

0.85

100

Responsivity at 1310nm

Responsivity at 1550nm

Rise/Fall time

Shunt Resistance (Class A) ⁽²⁾

Noise Equivalent Power (Class A)

D* (Class A)

0.90

0.95

1.2

A/W

μs

100

KΩ

2x10^-13

2x10¹²

WHz ^-1/2

cmHz^1/2W^-1

(1) 0.3V reverse bias

(2) 0V reverse bias

中文翻译

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