PD57070

更新时间： 2024-01-28 17:24:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
13页	299K
描述
RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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中文翻译

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PD57070 数据手册

PD57070

PD57070S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 70 W with 14.7 dB gain @ 945 MHz / 28V

OUT

• NEW RF PLASTIC PACKAGE

PowerSO-10RF

(formed lead)

ORDER CODE

BRANDING

PD57070

DESCRIPTION

PD57070

The PD57070 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. PD57070 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD57070’s

superior linearity performance makes it an ideal

solution for base station applications.

PowerSO-10RF

(straight lead)

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

ORDER CODE

PD57070S

BRANDING

PD57070S

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

= 25 ^°C)

CASE

Symbol

Parameter

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

(BR)DSS

± 20

Power Dissipation (@ Tc = 70°C)

Max. Operating Junction Temperature

Storage Temperature

°C

DISS

165

STG

-65 to +150

THERMAL DATA (T

=70 ^°C)

CASE

th(j-c)

Junction -Case Thermal Resistance

1.0

°C/W

March, 21 2003

1/13

12 3 4 5 6 7...13

中文翻译

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