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PD57006-01 PDF预览

PD57006-01

更新时间: 2024-02-09 15:27:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关射频
页数 文件大小 规格书
4页 42K
描述
RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY

PD57006-01 技术参数

生命周期:Obsolete包装说明:PLASTIC, POWERFLAT-12
针数:12Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):1 A
最大漏极电流 (ID):1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:S-PQCC-N12
元件数量:1端子数量:12
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:NO LEAD
端子位置:QUAD晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PD57006-01 数据手册

 浏览型号PD57006-01的Datasheet PDF文件第2页浏览型号PD57006-01的Datasheet PDF文件第3页浏览型号PD57006-01的Datasheet PDF文件第4页 
PD57006-01  
RF POWER TRANSISTORS  
The LdmoST Plastic FAMILY  
TARGET DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
P  
= 6 W with 15 dB gain @ 945 MHz / 28V  
OUT  
NEW LEADLESS PLASTIC PACKAGE  
PowerFLAT(5x5)  
DESCRIPTION  
ORDER CODE  
PD57006-01  
BRANDING  
PD57006-01  
The PD57006-01 is a common source N-Channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 28 V in common source mode at frequencies of  
up to 1 GHz. PD57006-01 boasts the excellent  
gain, linearity and reliability of ST’s latest LDMOS  
technology mounted in the innovative leadless  
SMD plastic package, PowerFLAT™.  
It is ideal for digital cellular BTS applications  
requiring high linearity.  
ABSOLUTE MAXIMUM RATINGS (T  
= 2\5 °C)  
CASE  
Symbol  
Parameter  
Value  
65  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
(BR)DSS  
V
± 20  
V
GS  
I
D
1
A
P
Power Dissipation (@ Tc = 70°C)  
Max. Operating Junction Temperature  
Storage Temperature  
TBD  
W
°C  
°C  
DISS  
Tj  
150  
T
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
TBD  
°C/W  
February, 21 2002  
1/4  

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