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PD57006S

更新时间： 2024-02-01 08:51:30
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频场效应晶体管光电二极管放大器
页数 文件大小 规格书
14页 280K
描述
RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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中文翻译

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PD57006S 技术参数

生命周期：Not Recommended零件包装代码：SOT
包装说明：ROHS COMPLIANT, PLASTIC, POWERSO-10RF, SMD, 2 PIN针数：10
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：8.25Is Samacsys：N
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 V最大漏极电流 (Abs) (ID)：1 A
最大漏极电流 (ID)：1 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G2
JESD-609代码：e3湿度敏感等级：3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：250
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - annealed
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PD57006S 数据手册

 浏览型号PD57006S的Datasheet PDF文件第2页浏览型号PD57006S的Datasheet PDF文件第3页浏览型号PD57006S的Datasheet PDF文件第4页浏览型号PD57006S的Datasheet PDF文件第5页浏览型号PD57006S的Datasheet PDF文件第6页浏览型号PD57006S的Datasheet PDF文件第7页 
PD57006  
PD57006S  
RF POWER TRANSISTORS  
The LdmoST Plastic FAMILY  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
• EXCELLENT THERMAL STABILITY  
• COMMON SOURCE CONFIGURATION  
• P  
= 6 W with 15 dB gain @ 945 MHz / 28V  
OUT  
• NEW RF PLASTIC PACKAGE  
PowerSO-10RF  
(formed lead)  
DESCRIPTION  
The PD57006 is a common source N-Channel, en-  
hancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 28 V in common source mode at frequencies of  
up to 1 GHz. PD57006 boasts the excellent gain,  
linearity and reliability of ST’s latest LDMOS tech-  
nology mounted in the first true SMD plastic RF  
power package, PowerSO-10RF. PD57006’s su-  
perior linearity performance makes it an ideal so-  
lution for car mobile radio.  
ORDER CODE  
BRANDING  
PD57006  
PD57006  
The PowerSO-10 plastic package, designed to of-  
fer high reliability, is the first ST JEDEC approved,  
high power SMD package. It has been specially  
optimized for RF needs and offers excellent RF  
performances and ease of assembly.  
PowerSO-10RF  
(straight lead)  
ORDER CODE  
PD57006S  
BRANDING  
PD57006S  
Mounting recommendations are available in  
www.st.com/rf/ (look for application note AN1294)  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C)  
CASE  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
65  
(BR)DSS  
V
± 20  
V
GS  
I
D
1
20  
A
P
Power Dissipation (@ Tc = 70°C)  
Max. Operating Junction Temperature  
Storage Temperature  
W
°C  
°C  
DISS  
Tj  
165  
T
STG  
-65 to +150  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
5
°C/W  
March, 21 2003  
1/14  
1234567...14

中文翻译

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PD57006S 替代型号

型号 品牌 替代类型 描述 数据表
PD57006STR-E STMICROELECTRONICS

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