Datasheet > PD57006-E_10

PD57006-E_10

更新时间： 2024-02-06 07:01:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
22页	509K
描述
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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PD57006-E_10 数据手册

PD57006-E

PD57006S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ P = 6 W with 15dB gain @ 945 MHz / 28 V

OUT

■ New RF plastic package

PowerSO-10RF

(formed lead)

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. PD57006 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF. Device’s

superior linearity performance makes it an ideal

solution for car mobile radio. The PowerSO-10

plastic package, designed to offer high reliability,

is the first ST JEDEC approved, high power SMD

package. It has been specially optimized for RF

needs and offers excellent RF performances and

ease of assembly. Mounting recommendations

are available in www.st.com/rf/ (look for

PowerSO-10RF

(straight lead)

Figure 1.

Pin connection

Source

Drain

application note AN1294).

Gate

Table 1.

Device summary

Order code

Package

Packing

PD57006-E

PD57006S-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Tube

PD57006TR-E

PD57006STR-E

Tape and reel

May 2010

Doc ID 12611 Rev 2

1/22

www.st.com

12 3 4 5 6 7...22

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