Datasheet > PD54003-01

PD54003-01

更新时间： 2024-11-19 23:26:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	42K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 25V V(BR)DSS \| 4A I(D) \| LLCC

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中文翻译

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PD54003-01 数据手册

PD54003-01

RF POWER TRANSISTORS

The LdmoST PLASTIC FAMILY

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 3 W WITH 12 dB gain @ 500 MHz

OUT

• NEW LEADLESS PLASTIC PACKAGE

PowerFLAT™(5x5)

ORDER CODE

BRANDING

PD54003-01

DESCRIPTION

The PD54003-01 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 7 V in common source mode at frequencies of

up to 1 GHz. PD54003-01 boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in the innovative leadless

SMD plastic package, PowerFLAT™.

PD54003-01’s superior linearity performance

makes it an ideal solution for portable radio.

ABSOLUTE MAXIMUM RATINGS (T

= 25 ^°C)

CASE

Symbol

Parameter

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

(BR)DSS

± 20

Power Dissipation (@ Tc = 70°C)

Max. Operating Junction Temperature

Storage Temperature

TBD

°C

DISS

150

-65 to +150

STG

THERMAL DATA

th(j-c)

Junction -Case Thermal Resistance

TBD

°C/W

February, 21 2002

1/4

12 3 4

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