Datasheet > PD54008-E_10

PD54008-E_10

更新时间： 2024-01-16 01:25:41

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
29页	819K
描述
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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PD54008-E_10 数据手册

PD54008-E

PD54008S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ P = 8 W with 11.5dB gain @ 500 MHz/7.5 V

OUT

■ New RF plastic package

PowerSO-10RF

(formed lead)

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 7 V in common source mode at

frequencies of up to 1 GHz. The device boasts the

excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

Device’s superior linearity performance makes it

an ideal solution for portable radio.

PowerSO-10RF

(straight lead)

Figure 1.

Pin connection

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Source

Drain

Gate

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294).

Table 1.

Device summary

Order code

Package

Packing

PD54008-E-E

PD54008S-E-E

PD54008TR-E

PD54008STR-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Tube

Tape and reel

May 2010

Doc ID 12271 Rev 2

1/29

www.st.com

12 3 4 5 6 7...29

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