5秒后页面跳转
PD54003-E PDF预览

PD54003-E

更新时间: 2024-11-20 03:42:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
28页 446K
描述
RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

PD54003-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
针数:10Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:25 weeks
风险等级:5.69其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:165 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):52.8 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

PD54003-E 数据手册

 浏览型号PD54003-E的Datasheet PDF文件第2页浏览型号PD54003-E的Datasheet PDF文件第3页浏览型号PD54003-E的Datasheet PDF文件第4页浏览型号PD54003-E的Datasheet PDF文件第5页浏览型号PD54003-E的Datasheet PDF文件第6页浏览型号PD54003-E的Datasheet PDF文件第7页 
PD54003-E  
PD54003S-E  
RF POWER transistor, LDMOST plastic family  
N-channel enhancement-mode, lateral MOSFETs  
General features  
Excellent thermal stability  
Common source configuration  
P = 3W with 12dB gain @ 500MHz  
OUT  
New RF plastic package  
PowerSO-10RF  
(formed lead)  
Description  
The PD54003 is a common source N-channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broadband  
commercial and industrial applications. It  
operates at 7V in common source mode at  
frequencies of up to 1GHz.  
The PD54003 features the excellent gain, linearity  
and reliability of ST’s latest LDMOS technology,  
the PowerSO-10RF. The superior linearity  
performance makes it an ideal solution for  
portable radios.  
PowerSO-10RF  
(straight lead)  
The PowerSO-10RF is the first true Surface-  
mount Device (SMD) plastic RF power package. It  
is based on the highly reliable PowerSO-10, the  
first ST-originated, JEDEC-approved, high-power  
SMD package.  
Pin connection  
Source  
It has been optimized specifically for RF  
requirements, and offers excellent RF  
Drain  
Gate  
performance as well as ease of assembly.  
Surface-mount recommendations are available in  
Application Note AN1294 (see www.st.com/rf).  
Order codes  
Part number  
Package  
Packing  
PD54003-E  
PD54003S-E  
PD54003TR-E  
PD54003STR-E  
PowerSO-10RF (formed lead)  
PowerSO-10RF (straight lead)  
PowerSO-10RF (formed lead)  
PowerSO-10RF (straight lead)  
Tube  
Tube  
Tape and reel  
Tape and reel  
March 2006  
Rev 1  
1/28  
www.st.com  
28  

PD54003-E 替代型号

型号 品牌 替代类型 描述 数据表
PD54003S-E STMICROELECTRONICS

类似代替

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54003S STMICROELECTRONICS

类似代替

RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD54003 STMICROELECTRONICS

类似代替

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

与PD54003-E相关器件

型号 品牌 获取价格 描述 数据表
PD54003-E_10 STMICROELECTRONICS

获取价格

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54003L STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY
PD54003L-E STMICROELECTRONICS

获取价格

RF Power Transistors The LdmoST Plastic FAMILY
PD54003-PD54003S STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD54003S STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD54003S-E STMICROELECTRONICS

获取价格

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54003STR-E STMICROELECTRONICS

获取价格

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54003TR-E STMICROELECTRONICS

获取价格

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs
PD54008 STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD54008-E STMICROELECTRONICS

获取价格

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs