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PD54008L PDF预览

PD54008L

更新时间: 2024-02-10 10:07:02
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频场效应晶体管放大器
页数 文件大小 规格书
8页 95K
描述
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

PD54008L 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:25 weeks
风险等级:1.61Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:165 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):73 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

PD54008L 数据手册

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PD54008L  
RF POWER TRANSISTORS  
The LdmoST PLASTIC FAMILY  
ADVANCED DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
BROADBAND PERFORMANCES  
P
OUT  
= 8 W WITH 15 dB GAIN @ 500 MHz  
NEW LEADLESS PLASTIC PACKAGE  
ESD PROTECTION  
PowerFLAT(5x5)  
ORDER CODE  
PD54008L  
BRANDING  
SUPPLIED IN TAPE & REEL OF 3K UNITS  
54008  
PIN CONNECTION  
DESCRIPTION  
The PD54008L is a common source N-Channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 7 V in common source mode at frequencies of up  
to 1 GHz. PD54008L boasts the excellent gain,  
linearity and reliability of STH1LV latest LDMOS  
technology mounted in the innovative leadless  
SMD plastic package, PowerFLAT™.  
PD54008L’s superior linearity performance makes  
it an ideal solution for portable radio.  
TOP VIEW  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C)  
CASE  
Symbol  
Parameter  
Value  
25  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
(BR)DSS  
V
-0.5 to +15  
5
V
GS  
I
D
A
P
Power Dissipation (@ Tc = 70°C)  
Max. Operating Junction Temperature  
Storage Temperature  
26.7  
W
°C  
°C  
DISS  
Tj  
150  
T
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
3
°C/W  
May, 28 2003  
1/8  

PD54008L 替代型号

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