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PD54003-PD54003S PDF预览

PD54003-PD54003S

更新时间: 2024-11-17 22:26:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
10页 118K
描述
RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD54003-PD54003S 数据手册

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PD54003 - PD54003S  
RF POWER TRANSISTORS  
LdmoST  
The  
Plastic FAMILY  
PRELIMINARY DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V  
NEW RF PLASTIC PACKAGE  
PowerSO-10RF  
(Formed Lead)  
ORDER CODE  
PD54003  
BRANDING  
XPD54003  
DESCRIPTION  
The PD5400 is a common source N-Channel, en-  
hancement-mode, lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 7V in common source mode at frequencies of  
up to 1GHz. PD54003 boasts the excellent gain,  
linearity and reliability of ST’s latest LDMOS tech-  
nology mounted in the first true SMD plastic RF  
power package, PowerSO-10RF. PD54003’s su-  
perior linearity performance makes it an ideal so-  
lution for portable radio.  
PowerSO-10RF  
(Straight Lead)  
The PowerSO-10 plastic package, designed to of-  
fer high reliability, is the first ST JEDEC approved,  
high power SMD package. It has been specially  
optimized for RF needs and offers excellent RF  
performances and ease of assembly.  
ORDER CODE  
PD54003S  
BRANDING  
XPD54003S  
= 25 OC)  
ABSOLUTE MAXIMUM RATINGS(T  
CASE  
Parameter  
Drain Source Voltage  
Symbol  
Value  
Unit  
V
25  
±20  
V
V
(BR)DSS  
V
Gate-Source Voltage  
Drain Current  
GS  
I
4
A
D
0
P
52.8  
W
DISS  
Power Dissipation (@ Tc = 70 C)  
T
Max. Operating Junction Temperature  
Storage Temperature  
165  
0
j
C
C
T
-65 to 165  
0
STG  
THERMAL DATA  
0C/W  
1/10  
R
Junction-Case Thermal Resistance  
1.8  
th(j-c)  
May 2000  

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